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參數資料
| 型號： | IHW15T120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 在IGBT的溝槽場終止技術和軟，恢復快反平行何快恢復二極管 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 339K |
| 代理商： | IHW15T120 |
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Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10
μ
s
Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in
V
CE(sat)
Very soft, fast recovery anti-parallel EmCon
HE diode
Low EMI
Application specific optimisation of inverse diode
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
IHW15T120
Soft Switching Series
Power Semiconductors
1
Rev. 2 Mar-04
T
j,max
Marking
Package
Ordering Code
IHW15T120
1200V
15A
1.7V
150
°
C
H15T120
TO-247AC
Q67040-S4651
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
,
T
c
=25°C
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25
°
C,
t
p
= 10ms, sine halfwave
T
C
= 25
°
C,
t
p
≤
2.5μs, sine halfwave
T
C
= 100
°
C,
t
p
≤
2.5μs, sine halfwave
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation,
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
30
15
V
A
I
Cpuls
-
45
45
I
F
23
13
I
Fpuls
I
FSM
36
50
130
120
V
GE
t
SC
±
20
10
V
μ
s
P
tot
T
j
T
stg
-
113
W
-40...+150
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
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| IHW15T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 113W TO247-3 |
| IHW20N120R | 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R2 | 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R3 | 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 40A 310W TO247-3 |
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