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參數資料
| 型號： | IKA10N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 在IGBT的溝槽場終止技術和軟，恢復快反平行何快恢復二極管 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 368K |
| 代理商： | IKA10N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time – 5
μ
s
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
TrenchStop Series
IKA10N60T
Power Semiconductors
1
Rev. 2 Oct-04
T
j,max
Marking Code
Package
Ordering Code
IKA10N60T
600V
10A
1.5V
175
°
C
K10T60
TO-220-FP
Q67040S4683
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
400V,
T
j
≤
150
°
C
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation,
T
C
= 25
°
C
Operating junction temperature
Storage temperature
V
CE
I
C
600
20
10
V
A
I
Cpuls
-
30
30
I
F
20
10
I
Fpuls
V
GE
t
SC
30
±
20
5
V
μ
s
P
tot
T
j
T
stg
30
W
-40...+175
-55...+175
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-31
(TO-220 FullPak)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IKA10N60TXKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 11.7A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 11.7A TO220-3 |
| IKA15N60T | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKA15N60TXKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 14.7A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 14.7A 35.7W TO220-3 |
| IKA15N65F5 | 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKA15N65F5XKSA1 | 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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