欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IKA15N60T
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 低損耗DuoPack:在TrenchStop IGBT的場終止技術和軟,恢復快反平行何快恢復二極管
文件頁數: 1/13頁
文件大小: 402K
代理商: IKA15N60T
Low Loss DuoPack :
TrenchStop
Series
IKA15N60T
q
Power Semiconductors
1
Rev. 2.1 July 06
IGBT in
TrenchStop
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
TrenchStop
and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in V
CE(sat)
Low EMI
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Air Condition
Inverters
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Marking Code
Package
IKA15N60T
600V
15A
1.5V
175
°
C
K15T60
P-TO-220-3-31
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
600V,
T
j
175
°
C)
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
400V,
T
j
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Solder temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Isolation Voltage
V
CE
I
C
600
14.7
8.9
V
A
I
Cpuls
-
45
45
I
F
15.5
9
I
Fpuls
V
GE
t
SC
45
±
20
5
V
μ
s
P
tot
T
j
T
stg
35.7
W
-40...+175
-55...+175
260
°
C
V
isol
2500
V
rms
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits:
<1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-31
(TO-220 FullPak)
相關PDF資料
PDF描述
IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKB10N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP10N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB15N60T IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
相關代理商/技術參數
參數描述
IKA15N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 14.7A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 14.7A 35.7W TO220-3
IKA15N65F5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKA15N65F5XKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKA15N65H5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKA15N65H5XKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube
主站蜘蛛池模板: 资溪县| 翼城县| 镇远县| 长顺县| 岳阳县| 安仁县| 永定县| 鄂伦春自治旗| 景洪市| 昭通市| 潜山县| 射阳县| 韶关市| 方山县| 盐城市| 五华县| 错那县| 呼和浩特市| 梓潼县| 兴隆县| 东宁县| 兰溪市| 梁山县| 临沭县| 道孚县| 大关县| 南充市| 开封市| 梁山县| 兴国县| 安丘市| 湖北省| 南宫市| 木里| 许昌市| 泊头市| 公安县| 韩城市| 来宾市| 龙江县| 丁青县|