- 您現在的位置：買賣IC網 > PDF目錄385439 > IRF2903Z (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數資料
| 型號： | IRF2903Z |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 414K |
| 代理商： | IRF2903Z |
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 96988A
IRF2903Z
IRF2903ZS
IRF2903ZL
HEXFET
Power MOSFET
D
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.51
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
°C/W
820
290
See Fig.12a, 12b, 15, 16
290
2.0
± 20
Max.
260
180
75
1020
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
V
DSS
= 30V
R
DS(on)
= 2.4m
I
D
= 75A
S
G
D
2
Pak
IRF2903ZS
TO-220AB
IRF2903Z
TO-262
IRF2903ZL
S
D
G
D
S
D
G
D
D
S
D
G
G
D
S
Gate
Drain
Source
相關PDF資料 |
PDF描述 |
|---|---|
| IRF2903ZL | HEXFET Power MOSFET |
| IRF2903ZS | HEXFET Power MOSFET |
| IRF3000PBF | HEXFET Power MOSFET |
| IRF3007LPBF | HEXFET Power MOSFET |
| IRF3007SPBF | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF2903ZL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF2903ZLPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2903ZPBF | 功能描述:MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2903ZPBF | 制造商:International Rectifier 功能描述:Mosfet IC 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 30V, 75A TO-220AB |
| IRF2903ZS | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
發布緊急采購，3分鐘左右您將得到回復。