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參數資料
| 型號： | IRF5850 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 20V的，的Rds（on）\u003d 0.135ohm） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 126K |
| 代理商： | IRF5850 |
Parameter
Max.
-20
-2.2
-1.8
-9.0
0.96
0.62
7.7
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
7/25/00
Parameter
Max.
130
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
1
IRF5850
HEXFET
Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where
maximum functionality is required. With two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal
design and R
DS(on)
reduction enables an increase in
current-handling capability.
V
DSS
= -20V
R
DS(on)
= 0.135
Description
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Low Gate Charge
PD - 93947
TSOP-6
Top View
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF5850PBF | 制造商:International Rectifier 功能描述:MOSFET Dual P-Channel 20V 2.2A TSOP6 |
| IRF5850TR | 功能描述:MOSFET 2P-CH 20V 2.2A 6-TSOP RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF5850TRHR | 制造商:International Rectifier 功能描述:MOSFET, DUAL P-CHANNEL, -20V, 2.2A, TSOP-6 |
| IRF5850TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -20V 2.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5850TRPBF | 制造商:International Rectifier 功能描述:Transistor Polarity:Dual P Channel |
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