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參數(shù)資料
| 型號： | IRF6646 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 245K |
| 代理商： | IRF6646 |
Power MOSFET
d
Typical values (unless otherwise specified)
V
DSS
V
GS
80V max
±20V max
Q
g tot
Q
gd
36nC
12nC
DirectFET
ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
c
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Description
The IRF6646 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
MQ
MX
MT
M N
z
RoHS compliant containing no lead or bromide
c
z
Low Profile (<0.7 mm)
z
Dual Sided Cooling Compatible
c
z
Ultra Low Package Inductance
z
Optimized for High Frequency Switching
c
z
Ideal for High Performance Isolated Converter
Primary Switch Socket
z
Optimized for Synchronous Rectification
z
Low Conduction Losses
z
Compatible with existing Surface Mount Techniques
c
c
Click on this section to link to the appropriate technical paper.
d
Click on this section to link to the DirectFET Website.
e
Surface mounted on 1 in. square Cu board, steady state.
f
T
C
measured with thermocouple mounted to top (Drain) of part.
g
Repetitive rating; pulse width limited by max. junction temperature.
h
Starting T
J
= 25°C, L = 8.8mH, R
G
= 25
, I
AS
= 7.2A.
Notes:
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
e
Continuous Drain Current, V
GS
@ 10V
e
Continuous Drain Current, V
GS
@ 10V
f
Pulsed Drain Current
g
Single Pulse Avalanche Energy
h
Avalanche Current
g
A
mJ
A
230
7.2
Max.
80
9.6
68
96
±20
12
R
DS(on)
7.6m
@ 10V
V
gs(th)
3.8V
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0
0.01
0.02
0.03
0.04
0.05
TS
)
ID = 6.2A
TJ = 25°C
TJ = 125°C
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source
Voltage
0
10
20
30
40
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VG
VDS= 40V
VDS= 16V
ID= 7.2A
PD - 96995A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6646#PBF | 制造商:International Rectifier 功能描述:PN may be NE DW |
| IRF6646PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6646TR1 | 功能描述:MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6646TR1PBF | 功能描述:MOSFET MOSFT 80V 68A 9.5mOhm 36nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6646TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
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