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參數(shù)資料
| 型號： | IRF6668 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 256K |
| 代理商： | IRF6668 |
www.irf.com
1
11/4/05
IRF6668
Power MOSFET DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6668 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
I
S
@ T
C
= 25°C
Continuous Source Current (Body Diode)
I
S
@ T
C
= 70°C
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
T
C
measured with thermocouple mounted to top (Drain) of part.
SH
SJ
SP
MZ
MN
V
DSS
80V max ±20V max
V
GS
R
DS(on)
12m
@ 10V
Q
g tot
22nC
Q
gd
7.8nC
Units
V
A
170
81
52
170
44
Max.
80
±20
55
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6668PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6668TR1 | 功能描述:MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6668TR1PBF | 功能描述:MOSFET MOSFT 80V 55A 15mOhm 22nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6668TRBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6668TRPBF | 功能描述:MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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