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參數資料
| 型號： | IRF730ASTRRPBF |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 296K |
| 代理商： | IRF730ASTRRPBF |
3/16/04
www.irf.com
1
IRF730AS/LPbF
SMPS MOSFET
HEXFET Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l Lead-Free
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
VDSS
Rds(on) max
ID
400V
1.0
5.5A
Typical SMPS Topologies:
l Single Transistor Flyback Xfmr. Reset
l Single Transistor Forward Xfmr. Reset
(Both US Line input only).
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
5.5
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
3.5
A
IDM
Pulsed Drain Current
22
PD @TC = 25°C
Power Dissipation
74
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
4.6
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l Effective Coss Specified (See AN1001)
PD-95114
Notes through are on page 10
2
D Pak
TO-262
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF730B | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF730BPBF | 功能描述:MOSFET 400V 1ohm@10V 5.5A N/Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF730CHIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | CHIP |
| IRF730FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.5A I(D) | TO-220VAR |
| IRF730L | 功能描述:MOSFET N-CH 400V 5.5A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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