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參數資料
| 型號： | IRF7341Q |
| 英文描述： | 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
| 中文描述： | 55V的雙N溝道HEXFET功率MOSFET的SO - 8封裝 |
| 文件頁數： | 10/10頁 |
| 文件大小： | 184K |
| 代理商： | IRF7341Q |
IRF730AS/L
10
www.irf.com
Tape & Reel Information
D
2
Pak
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 19mH
R
G
= 25
, I
AS
= 5.5A. (See Figure 12)
I
SD
≤
5.5A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Uses IRF730A data and test conditions
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Data and specifications subject to change without notice. 5/00
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7341QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341QTR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R |
| IRF7341QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 4.7A 8-Pin SOIC T/R |
| IRF7341TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 55V 4.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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