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參數資料
| 型號： | IRF7342D2 |
| 英文描述： | -55V FETKY - MOSFET and Schottky Diode in a SO-8 package |
| 中文描述： | - 55V的FETKY - MOSFET和肖特基二極管的SO - 8封裝 |
| 文件頁數： | 7/10頁 |
| 文件大?。?/td> | 184K |
| 代理商： | IRF7342D2 |
IRF730AS/L
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7342D2HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC |
| IRF7342D2PBF | 功能描述:MOSFET MOSFT PCh w/Schttky -3.4A 105mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7342D2PBF | 制造商:International Rectifier 功能描述:MOSFET With Schottky Diode |
| IRF7342D2TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R |
| IRF7342D2TRPBF | 制造商:International Rectifier 功能描述:-55V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 3.4A 8SOIC - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET P-CH 55V 3.4A 8-SOIC |
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