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參數(shù)資料
| 型號(hào)： | irf7424 |
| 廠商： | International Rectifier |
| 英文描述： | Ultra Low On-Resistance |
| 中文描述： | 超低導(dǎo)通電阻 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 122K |
| 代理商： | IRF7424 |
Parameter
Max.
-30
-11
-9.3
-47
2.5
1.6
20
± 20
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
10/04/04
www.irf.com
1
IRF7424PbF
HEXFET Power MOSFET
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Parameter
Max.
50
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
V
DSS
-30V
R
DS(on)
max (m
13.5@V
GS
= -10V
22@V
GS
= -4.5V
I
D
-11A
-8.8A
SO-8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7424 | 制造商:International Rectifier 功能描述:MOSFET P SO-8 |
| IRF7424.PBF | 制造商:International Rectifier 功能描述:MOSFET P SO-8 制造商:International Rectifier 功能描述:MOSFET, P, SO-8 制造商:International Rectifier 功能描述:MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes |
| IRF7424GTRPBF | 功能描述:MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7424HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 11A 8-Pin SOIC |
| IRF7424PBF | 功能描述:MOSFET 1 P-CH -30V HEXFET 13.5mOhms 75nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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