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參數資料
| 型號： | IRF7555 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率 MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 71K |
| 代理商： | IRF7555 |
HEXFET
Power MOSFET
2/2/00
IRF7555
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter Max.
Maximum Junction-to-Ambient
Units
100 °C/W
R
θ
JA
Parameter
Max.
-20
-4.3
-3.4
-34
1.25
0.8
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage
± 12 V
E
AS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
T
J
, T
STG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
A
W
W
36 mJ
1.1
-55 to + 150
V/ns
°C
V
DSS
= -20V
R
DS(on)
= 0.055
Micro8
New trench HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8
package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
G
Trench Technology
G
Ultra Low On-Resistance
G
Dual P-Channel MOSFET
G
Very Small SOIC Package
G
Low Profile (<1.1mm)
G
Available in Tape & Reel
Description
PD -91865B
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| IRF7752 | Dual N-Channel MOSFET(雙 N溝道 MOS場效應管) |
| IRF7754 | Power MOSFET(Vdss=-12V) |
| IRF7755 | -20V,P-Channel HEXFET Power MOSFET(-20V,P溝道 HEXFET功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7555HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRF7555PBF | 制造商:International Rectifier 功能描述:MOSFET DUAL PP MICRO-8 |
| IRF7555TR | 功能描述:MOSFET 2P-CH 20V 4.3A MICRO8 RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7555TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -20V 4.3A Micro 8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7601 | 制造商:International Rectifier 功能描述:MOSFET N MICRO-8 |
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