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參數(shù)資料
| 型號： | IRF831FI |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-220VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 450V五（巴西）直| 3A條（丁）|對220VAR |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 190K |
| 代理商： | IRF831FI |
www.irf.com
1
5/4/00
IRF830AS/L
HEXFET
Power MOSFET
SMPS MOSFET
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg Results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss specified (See AN 1001)
Applications
V
DSS
500V
R
DS(on)
max
1.40
I
D
5.0A
Typical SMPS Topologies:
l
Two Transistor Forward
l
Half Bridge and Full Bridge
PD- 92006A
Notes
through
are on page 10
Parameter
Max.
5.0
3.2
20
3.1
74
0.59
± 30
5.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
D
2
Pak TO-262
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| IRF832 | 制造商:Samsung Semiconductor 功能描述:Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 |
| IRF8327STR1PBF | 功能描述:MOSFET 30V N-Channel HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8327STRPBF | 功能描述:MOSFET 30V N-Channel HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF832FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-220AB |
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