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參數資料
| 型號： | IRF9953 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 30V的，的Rds（on）\u003d 0.25ohm） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 107K |
| 代理商： | IRF9953 |
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1560A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
8/25/97
SO-8
V
DSS
= -30V
R
DS(on)
= 0.25
IRF9953
Description
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
Symbol
V
DS
V
GS
Maximum
-30
± 20
-2.3
-1.8
-10
1.6
2.0
1.3
57
-1.3
0.20
-5.0
-55 to + 150
Units
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C
T
A
= 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
I
DM
I
S
T
A
= 25°C
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Symbol
R
θ
JA
Limit
62.5
Units
Maximum Junction-to-Ambient
°C/W
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D1
D1
D2
D2
G 1
S2
G 2
S1
Top View
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Very Low Gate Charge and
Switching Losses
l
Fully Avalanche Rated
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF9953PBF | 功能描述:MOSFET DUAL -30V P-CH 20V VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9953TR | 功能描述:MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF9953TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -30V 2.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9956 | 功能描述:MOSFET 2N-CH 30V 3.5A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF9956HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 3.5A 8-Pin SOIC |
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