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參數資料
| 型號： | IRFB23N20D |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.10ohm，身份證\u003d 24A條） |
| 文件頁數： | 1/11頁 |
| 文件大小： | 196K |
| 代理商： | IRFB23N20D |
Notes
through
are on page 11
www.irf.com
1
4/26/00
IRFB23N20D
IRFS23N20D
IRFSL23N20D
HEXFET
Power MOSFET
SMPS MOSFET
V
DSS
200V
R
DS(on)
max
0.10
I
D
24A
PD- 93904A
D
2
Pak
IRFS23N20D
TO-220AB
IRFB23N20D
TO-262
IRFSL23N20D
Parameter
Max.
24
17
96
3.8
170
1.1
± 30
3.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
Typical SMPS Topologies
l
Telecom 48V input Forward Converter
相關PDF資料 |
PDF描述 |
|---|---|
| IRFS31N20DTRL | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB |
| IRFB31N20 | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFS31N20DTRR | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB |
| IRFB31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFS31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFB23N20DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB |
| IRFB23N20DPBF | 功能描述:MOSFET MOSFT 200V 24A 100mOhm 57nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB260 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) |
| IRFB260N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) |
| IRFB260NPBF | 功能描述:MOSFET MOSFT 200V 56A 40mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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