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參數(shù)資料
| 型號(hào)： | IRFB31N20 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.082ohm，身份證\u003d 31A條） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 190K |
| 代理商： | IRFB31N20 |
Parameter
Max.
31
21
124
3.1
200
1.3
± 30
2.1
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
www.irf.com
1
2/14/00
IRFB31N20D
IRFS31N20D
IRFSL31N20D
SMPS MOSFET
HEXFET
Power MOSFET
R
DS(on)
max
0.082
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
V
DSS
200V
I
D
31A
Typical SMPS Topologies
l
Telecom 48V Input Forward Converters
Absolute Maximum Ratings
Notes
through
are on page 11
D
2
Pak
IRFS31N20D
TO-220AB
IRFB31N20D
TO-262
IRFSL31N20D
PD- 93805B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFS31N20DTRR | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB |
| IRFB31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFS31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFSL31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFS3207ZPbF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFB31N20D | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N TO-220 制造商:Distributed By MCM 功能描述:200V 31A 200W Gds Ir Hexfet TO-220Ab N-Ch |
| IRFB31N20DPBF | 功能描述:MOSFET MOSFT 200V 31A 82mOhm 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3206GPBF | 功能描述:MOSFET MOSFT 60V 210A 3mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3206PBF | 功能描述:MOSFET MOSFT 60V 210A 3mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3207 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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