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參數資料
| 型號： | IRFC2907B |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET Die in Wafer Form |
| 中文描述： | HEXFET功率MOSFET芯片晶圓形式 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | IRFC2907B |
Parameter
V
(BR)DSS
R
DS(on)***
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Mechanical Data
Description
Min
75V
–––
2.0
–––
–––
Typ.
–––
2.5m
–––
–––
–––
Max
–––
4.5m
4.0V
20μA
± 200nA
Test Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 110A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 75V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±20V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
-55°C to 175°C Max.
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-5kA° )
100% Al (0.008 mm)
.257" x .360" [ 6.53 mm x 9.14 mm ]
150 mm, with 100 flat
0.254 mm ± 0.025 mm
01-5403
0.107 mm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
IRFP2907
Recommended Die Attach Conditions:
Reference Packaged Part
Die Outline
75V
R
DS(on)
= 2.5m
(
typ.)
6" Wafer
10/4/00
Electrical Characteristics *
IRFC2907B
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
www.irf.com
1
GATE
SOURCE
SOURCE
6.53
[.257]
9.14
[.360]
0.508
[.020]
0.508
[.020]
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
LENGTH
OVERALL DIE:
WIDTH
&
NOTES:
2. CONTROLLING DIMENSION: [INCH].
3. LETTER DESIGNATION:
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
< 0.635 TOLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE = + /- 0.025
> [.0250] TOLERANCE = + /- [.0010]
IS = CURRENTSENSE
SK = SOURCE KELVIN
BONDING PADS:
WIDTH
LENGTH
&
E = EMITTER
* Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in
die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.
** Contact factory for these product forms.
***The typical R
DS(on)
is an estimated value for the bare die, actual results will depend on customer packaging materials and
dimensions.
l
100% Tested at Probe
l
Available in Tape and Reel, Chip Pack,
Sawn on Film and Gel Pack**
l
Ultra Low On-Resistance
PD - 93777
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PDF描述 |
|---|---|
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| IRFD014 | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A) |
| IRFD024 | Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A) |
| IRFD110 | 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFC2N65AB | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 650V - Bulk |
| IRFC310R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP |
| IRFC320B | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 400V - Bulk |
| IRFC320R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP |
| IRFC330R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP |
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