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參數(shù)資料
| 型號： | IRFG5210 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 200V V(BR)DSS | 680MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補| 200伏五（巴西）直| 680MA（丁）|雙酯 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 193K |
| 代理商： | IRFG5210 |
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9
IRFG5210
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
P-Channel
Q2,Q4
1
10
100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
4
Q , Total Gate Charge (nC)
8
12
16
20
0
4
8
12
16
20
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-0.68A
V
=-40V
DS
V
=-100V
DS
V
=-160V
DS
0.1
1
10
1.0
2.0
3.0
4.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
T = 150 C
°
0.1
1
10
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
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