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參數(shù)資料
| 型號(hào)： | IRFIB41N15D |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 268K |
| 代理商： | IRFIB41N15D |
www.irf.com
1
07/16/03
HEXFET Power MOSFET
R
DS(on)
max
0.045
Notes
through are on page 12
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
V
DSS
150V
I
D
41A
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation, D
2
Pak
P
D
@T
C
= 25°C
Power Dissipation, TO-220
P
D
@T
C
= 25°C
Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
V
GS
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
A
W
W/°C
V
dv/dt
V/ns
°C
Nm (lbfin)
Parameter
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
°C/W
R
θ
JC
R
θ
JC
R
θ
cs
R
θ
JA
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Case, Fullpak
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, TO-220
Junction-to-Ambient, D
2
Pak
Junction-to-Ambient, Fullpak
3.1
200
48
0.32
± 30
1.3
2.7
Max.
41
29
164
-55 to + 175
300 (1.6mm from case )
1.1(10)
D
2
Pak
IRFS41N15D
TO-220AB
IRFB41N15D
TO-262
IRFSL41N15D
TO-220 FullPak
IRFIB41N15D
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