- 您現在的位置：買賣IC網 > PDF目錄360942 > IRFN140SMD N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N溝道功率MOS場效應管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) PDF資料下載
參數資料
| 型號： | IRFN140SMD |
| 英文描述： | N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N溝道功率MOS場效應管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：100V的，身份證（續）：13.9A，的Rds（on）：0.077Ω）（不適用馬鞍山溝道功率場效應管（減振鋼板基本：100V的，身份證（續）：13.9A時，RDS（對）：0.077Ω）） |
| 文件頁數： | 2/2頁 |
| 文件大小： | 22K |
| 代理商： | IRFN140SMD |
IRFN140SMD
Prelim. 7/00
LA B
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 13.9A
I
D
= 22A
I
D
= 250
m
A
I
DS
= 13.9A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 22A
V
DS
= 0.5BV
DSS
I
D
= 22A
V
DD
= 50V
I
D
= 22A
R
G
= 9.1
W
I
S
= 22A
V
GS
= 0
I
F
= 22A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
100
0.13
0.077
0.125
4
2
9.1
25
250
100
–100
1660
550
120
30
59
2.4
12
12
30.7
21
145
64
105
22
88
1.5
400
2.9
Negligible
0.8
2.8
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
相關PDF資料 |
PDF描述 |
|---|---|
| IRFN140 | POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A) |
| IRFN140SMD | ER CET 0 |
| IRFN150SMD | N-Channel Power MOSFET(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)(N溝道功率MOS場效應管(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)) |
| IRFN150 | POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A) |
| IRFN150SMD | N-CHANNEL POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFN150 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 34A 3-Pin SMD-1 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 34A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 34A, SMD-1; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFN150SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFN214B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFN214BTA | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFN214BTA_FP001 | 功能描述:MOSFET 250V N-CHAN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。