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參數資料
| 型號： | IRFP054N |
| 廠商： | International Rectifier |
| 英文描述： | IC/71054 24P P DIP INTERFACE |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.012ohm，身份證\u003d 81A條） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 109K |
| 代理商： | IRFP054N |
IRFP054N
HEXFET
Power MOSFET
PD - 9.1382A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
81
57
290
170
1.1
± 20
360
43
17
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
0.24
–––
Max.
0.90
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.012
I
D
= 81A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
8/25/97
TO-247AC
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFP054NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 81A 3-Pin(3+Tab) TO-247AC |
| IRFP054NPBF | 功能描述:MOSFET MOSFT 55V 72A 12mOhm 86.7nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP054PBF | 功能描述:MOSFET N-Chan 60V 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP054V | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A) |
| IRFP054VPBF | 制造商:International Rectifier 功能描述:MOSFET |
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