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參數(shù)資料
| 型號： | IRFPS3810 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.009ohm，身份證\u003d 170A章） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | IRFPS3810 |
IRFPS3810
HEXFET
Power MOSFET
The HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
S
D
G
Parameter
Max.
170
120
670
580
3.8
± 30
1350
100
58
2.3
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°
C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
V
DSS
= 100V
R
DS(on)
= 0.009
I
D
= 170A
Description
1/21/02
1
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
Super
-
247
PD - 93912A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IRFPS3810HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-274AA |
| IRFPS3810PBF | 功能描述:MOSFET 100V SINGLE N-CH 9mOhms 260nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS3815 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A) |
| IRFPS3815PBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 15mOhms 260nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS3815PBF | 制造商:International Rectifier 功能描述:MOSFET |
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