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參數資料
| 型號： | IRFR3209A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 3.1AI（四）|對252AA |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 117K |
| 代理商： | IRFR3209A |
2002 Fairchild Semiconductor Corporation
IRFR320, IRFU320 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse P-N
Junction Rectifier
-
-
3.1
A
Pulse Source to Drain Current
(Note 3)
-
-
12
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 3.1A, V
GS
= 0V,
(Figure 13)
T
J
= 25
o
C, I
SD
= 3.1A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 3.1A, dI
SD
/dt = 100A/
μ
s
-
-
1.6
V
Reverse Recovery Time
t
rr
120
270
600
ns
Reverse Recovery Charge
Q
RR
0.64
1.4
3.0
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 3.1mH, R
GS
= 25
,
peak I
AS
= 3.1A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
4.0
3.2
2.4
1.6
0.8
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
θ
J
,
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
0.1
0.05
0.02
0.01
0.2
0.5
10
IRFR320, IRFU320
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR320A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA |
| IRFR320B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| IRFR320BTF | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320BTM | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320PBF | 功能描述:MOSFET N-Chan 400V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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