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參數(shù)資料
| 型號： | IRFR5305PBF |
| 廠商： | International Rectifier |
| 英文描述： | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 1200; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; Pins: 144; Temp.: AUTO |
| 中文描述： | ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d - 55V的，的RDS（on）\u003d 0.065ヘ，身份證\u003d - 31A條） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 252K |
| 代理商： | IRFR5305PBF |
IRFR5305PbF
IRFU5305PbF
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Parameter
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
Units
I
D
@ T
C
= 25 C
I
D
@ T
C
= 100 C
I
DM
P
D
@T
C
= 25 C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/ C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
C/W
Thermal Resistance
Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
12/13/04
D-Pak
IRFR5305 IRFU5305
I-Pak
PD-95025A
V
DSS
= -55V
R
DS(on)
= 0.065
I
D
= -31A
S
D
G
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU5305PBF | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 1200; Supply Voltage: 1.2V; I/Os: 211; Grade: -3; Package: Lead-Free ftBGA; Pins: 256; Temp.: AUTO |
| IRFR5305 | -55V,P-Channel HEXFET Power MOSFET(-55V,P溝道 HEXFET功率MOS場效應(yīng)管) |
| IRFRU5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| IRFU5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| IRFR5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR5305TRL | 功能描述:MOSFET P-CH 55V 31A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFR5305TRLPBF | 功能描述:MOSFET MOSFT PCh -55V -28A 65mOhm 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR5305TRLPBF | 制造商:International Rectifier 功能描述:P CHANNEL MOSFET -55V 31A D-PAK |
| IRFR5305TRLPBFBL | 制造商:International Rectifier 功能描述: |
| IRFR5305TRPBF | 功能描述:MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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