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參數資料
| 型號： | IRFZ44NL |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.0175ohm，身份證\u003d 49A條） |
| 文件頁數： | 2/8頁 |
| 文件大小： | 64K |
| 代理商： | IRFZ44NL |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ44N
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.04
-
-
15
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
22
42
UNIT
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
μ
A
μ
A
μ
A
μ
A
V
m
m
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
10 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
R
DS(ON)
Gate source breakdown voltage I
G
=
±
1 mA;
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
Q
g
Total gate charge
Q
gs
Gate-cource charge
Q
gd
Gate-drain (miller) charge
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
6
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1350
330
155
-
-
-
18
50
40
30
3.5
MAX.
-
1800
400
215
62
15
26
26
75
50
40
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
nH
V
DD
= 44 V; I
D
= 50 A; V
GS
= 10 V
V
DD
= 30 V; I
D
= 25 A;
V
= 10 V; R
G
= 10
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
49
UNIT
A
-
-
-
-
-
-
160
1.2
-
-
-
A
V
I
F
= 25 A; V
GS
= 0 V
I
F
= 40 A; V
GS
= 0 V
I
F
= 40 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.95
1.0
47
0.15
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
ns
μ
C
February 1999
2
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ44VZS | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) |
| IRFZ44NS | Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) |
| IRFZ44VL | Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) |
| IRFZ44VS | Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) |
| IRFZ44VZ | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ44NLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 49A 3PIN TO-262 - Bulk |
| IRFZ44NLPBF | 功能描述:MOSFET MOSFT 55V 49A 17.5mOhm 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44NLPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFZ44NPBF | 功能描述:MOSFET MOSFT 55V 41A 17.5mOhm 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44NPBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 49A TO-220AB |
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