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參數資料
| 型號： | IRFZ44NS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode TrenchMOS transistor |
| 中文描述： | 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 4/8頁 |
| 文件大小： | 64K |
| 代理商： | IRFZ44NS |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ44N
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
0
20
40
60
80
100
ID/A
VDS/V
VGS/V =
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
16
10
9
8.5
0
20
40
60
80
100
0
5
10
15
20
25
30
gfs/S
ID/A
0
10
20
30
40
50
60
70
80
90
10
15
20
25
30
35
40VGS/V =
6
6.5
7
8
9
10
ID/A
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0
2
4
6
8
10
12
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
BUK759-60
0
-50
0
50
100
150
200
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
February 1999
4
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ44 | N-channel enhancement mode TrenchMOS transistor |
| IRFZ44 | N-CHANNEL POWER MOSFETS |
| IRFZ44EL | MOV 250V RMS 17MM HIGH ENERGY |
| IRFZ44ES | MOV 175V RMS 17MM HIGH ENERGY |
| IRFZ44N | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ44NS\31B | 功能描述:MOSFET USE 781-SUB40N06-25L RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 49A 3-Pin(2+Tab) D2PAK |
| IRFZ44NSPBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44NSTRL | 制造商:International Rectifier 功能描述:Single N-Channel 55 V 3.8 W 63 nC Hexfet Power Mosfet Surface Mount - D2PAK-3 |
| IRFZ44NSTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 49A 3-Pin(2+Tab) D2PAK T/R |
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