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參數資料
| 型號： | IRFZ44 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | N-CHANNEL POWER MOSFETS |
| 中文描述： | N溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 64K |
| 代理商： | IRFZ44 |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ44N
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor in a plastic envelope using
’
trench
’ technology.
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in switched mode
power supplies and general purpose
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
49
110
175
22
V
A
W
C
m
The
device
V
GS
= 10 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
49
35
160
110
175
UNIT
V
V
V
A
A
A
W
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.4
UNIT
K/W
R
th j-a
in free air
60
-
K/W
d
g
s
1 2 3
tab
February 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ44EL | MOV 250V RMS 17MM HIGH ENERGY |
| IRFZ44ES | MOV 175V RMS 17MM HIGH ENERGY |
| IRFZ44N | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) |
| IRFZ44NL | Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) |
| IRFZ44VZS | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ44_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFZ44A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFZ44CN | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc N-Channel MOSFET Transistor |
| IRFZ44E | 功能描述:MOSFET N-CH 60V 48A TO-220AB RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFZ44E-004HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
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