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參數資料
| 型號： | IRG4BC30S-SPBF |
| 廠商： | International Rectifier |
| 英文描述： | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 271; Grade: -3; Package: Lead-Free ftBGA; Pins: 324; Temp.: AUTO |
| 中文描述： | 絕緣柵雙極晶體管IGBT的標準速度 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 215K |
| 代理商： | IRG4BC30S-SPBF |
Parameter
Max.
600
34
18
68
68
±20
10
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
V
mJ
-55 to +150
°C
300 (0.063 in. (1.6mm) from case )
IRG4BC30S-SPbF
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tight
parameter distribution and high efficiency
Lead-Free
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.4V
@V
GE
= 15V, I
C
= 18A
Parameter
Typ.
–––
0.50
–––
1.44
Max.
1.2
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
8/30/04
1
D
2
Pak
PD - 95786
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4BC30S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) |
| IRG4BC30U-SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC30UDPBF | General-Purpose Power-Supply Monitor and Sequence Controller; 48-TQFP |
| IRG4BC30U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
| IRG4BC30W-SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4BC30S-STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB |
| IRG4BC30S-STRLP | 功能描述:IGBT 模塊 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG4BC30S-STRR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB |
| IRG4BC30U | 功能描述:IGBT UFAST 600V 23A TO-220AB RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC30UD | 制造商:International Rectifier 功能描述:IGBT TO-220 |
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