- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377516 > IRG4IBC20UDPBF (International Rectifier) Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.4 to 5.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD PDF資料下載
參數(shù)資料
| 型號(hào)： | IRG4IBC20UDPBF |
| 廠商： | International Rectifier |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.4 to 5.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 316K |
| 代理商： | IRG4IBC20UDPBF |
IRG4IBC20UDPbF
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
2.5kV, 60s insulation voltage
g
4.8 mm creapage distance to heatsink
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
Tighter parameter distribution
Industry standard Isolated TO-220 Fullpak
TM
outline
Lead-Free
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 6.5A
12/30/03
PD -94917
Parameter
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.1
65
–––
Units
R
θ
JC
R
θ
JC
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
TO-220 FULLPAK
1
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
c
Clamped Inductive Load Current
d
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case
g
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
11.4
6.0
52
52
6.5
52
2500
± 20
34
14
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
Visol
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
W
Benefits
Simplified assembly
Highest efficiency and power density
HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4IBC30KDPBF | Replacement for Texas Instruments part number SN74LS151N. Buy from authorized manufacturer Rochester Electronics. |
| IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4IBC30UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4MC40U | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4P254SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4IBC20W | 功能描述:IGBT WARP 600V 11.8A TO-220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4IBC20W_04 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4IBC20WPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4IBC30F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC30FD | 功能描述:IGBT W/DIODE 600V 20.3A TO-220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。