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參數資料
| 型號： | irg4ibc30w |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 160K |
| 代理商： | IRG4IBC30W |
Parameter
Max.
600
17
8.4
92
92
± 20
180
45
18
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
°C
12/30/00
W
IRG4IBC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
2.5kV, 60s insulation voltage
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Industry standard Isolated TO-220 Fullpak
TM
outline
Benefits
PD 91791A
E
C
G
n-channel
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
V
CES
= 600V
V
CE(on) typ.
=
2.1V
@V
GE
= 15V, I
C
= 12 A
TO-220 FULLPAK
www.irf.com
1
Parameter
Typ.
–––
–––
2.0 (0.07)
Max.
2.8
65
–––
Units
R
θ
JC
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
°
C/W
g (oz)
Thermal Resistance
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相關代理商/技術參數 |
參數描述 |
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| IRG4IBC30WPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4MC30F | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:IGBT N-CH 600V 28AMPS 3 PIN |
| IRG4MC30FSCV | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN TO-254AA - Bulk |
| IRG4MC30FSCX | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN TO-254AA - Bulk |
| IRG4MC40U | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 35A 3PIN TO-254AA - Bulk |
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