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參數資料
| 型號： | IRG4IBC30WPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 254K |
| 代理商： | IRG4IBC30WPBF |
Parameter
Max.
600
17
8.4
92
92
± 20
180
45
18
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
°C
IRG4IBC30WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
2.5kV, 60s insulation voltage
ndustry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Industry standard Isolated TO-220 Fullpak
TM
outline
Lead-Free
Benefits
E
C
G
n-channel
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
=
TO-220 FULLPAK
www.irf.com
1
Parameter
Typ.
–––
–––
2.0 (0.07)
Max.
2.8
65
–––
Units
R
θ
JC
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
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