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參數(shù)資料
| 型號(hào)： | IRG4PSC71KD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A) |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.83V，@和VGE \u003d 15V的，集成電路\u003d 60A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 253K |
| 代理商： | IRG4PSC71KD |
IRG4PSC71UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
IGBT co-packaged with HEXFRED ultrafast, ultrasoft
recovery anti-parallel diodes for use in bridge
configurations
Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
Creepage distance increased to 5.35mm
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.67V
@V
GE
= 15V, I
C
= 60A
5/12/99
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
85
60
200
200
60
350
± 20
350
140
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Benefits
Generation 4 IGBT's offer highest efficiencies
available
Maximum power density, twice the power
handling of TO-247, less space than TO-264
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with IGBTs
Cost and space saving in designs that require
multiple, paralleled IGBTs
PD - 91682A
W
www.irf.com
1
SUPER - 247
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
–––
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
0.69
–––
38
–––
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
°C/W
N (kgf)
g (oz)
Thermal Resistance\ Mechanical
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4PSC71U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A) |
| IRG4PSH71UD | INSULATED GATE BIPOLAR TRANSISTOR WITH |
| IRG4PSH71U | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PSH71 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
| IRG4PSH71K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PSC71KDPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PSC71KPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PSC71U | 制造商:International Rectifier 功能描述:IGBT |
| IRG4PSC71UD | 制造商:International Rectifier 功能描述:IGBT |
| IRG4PSC71UDPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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