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參數(shù)資料
| 型號(hào)： | IRG4PSH71UD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH |
| 中文描述： | 絕緣柵雙極型晶體管 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 336K |
| 代理商： | IRG4PSH71UD |
IRG4PSH71UD
UltraFast Copack IGBT
PD - 91686
Features
UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
Creepage distance increased to 5.35mm
Benefits
Generation 4 IGBT's offer highest efficiencies
available
Maximum power density, twice the power
handling of the TO-247, less space than TO-264
IGBTs optimized for specific application conditions
Cost and space saving in designs that require
multiple, paralleled IGBTs
HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
V
CES
= 1200V
V
CE(on) typ.
= 2.52V
@V
GE
= 15V, I
C
= 50A
www.irf.com
1
SUPER - 247
E
G
n-channel
C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Parameter
Max.
1200
99
50
200
200
±20
70
200
350
140
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
I
F
@ Tc = 100°C
I
FM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Gate-to-Emitter Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
20 (2.0)
–––
Typ.
–––
–––
0.24
–––
Max.
0.36
0.36
–––
38
Units
°C/W
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
N (kgf)
g (oz.)
Wt
6 (0.21)
–––
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| IRG4PSH71U | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PSH71 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
| IRG4PSH71K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PSH71UDPBF | 功能描述:IGBT 晶體管 1200V UltraFast 4-20kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PSH71UPBF | 功能描述:IGBT 晶體管 1200V UltraFast 8-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4RC10 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) |
| IRG4RC10K | 功能描述:IGBT UFAST 600V 9A D-PAK RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4RC10KD | 功能描述:DIODE IGBT 600V 9.0A D-PAK RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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