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參數(shù)資料
| 型號： | IRH8150 |
| 英文描述： | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package |
| 中文描述： | 100V的1000kRad高可靠性單N溝道MOSFET的工貿硬化在TO - 204AE包 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 273K |
| 代理商： | IRH8150 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
34
21
136
150
1.2
±20
500
34
15
5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204)
03/21/01
www.irf.com
1
100V, N-CHANNEL
HEXFET
RAD Hard
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
IRH7150 100K Rads (Si)
IRH3150 300K Rads (Si)
IRH4150 600K Rads (Si)
IRH8150 1000K Rads (Si)
I
D
0.065
0.065
0.065
0.065
34A
34A
34A
34A
For footnotes refer to the last page
IRH7150
TO-204AE
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
PD - 90677D
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| IRH8230 | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package |
| IRH7250SE | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package |
| IRH7450 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-204AA |
| IRH8130 | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRH8230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH8250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH8450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH9130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH9130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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