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參數資料
| 型號： | IRH8150 |
| 英文描述： | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package |
| 中文描述： | 100V的1000kRad高可靠性單N溝道MOSFET的工貿硬化在TO - 204AE包 |
| 文件頁數： | 2/12頁 |
| 文件大小： | 273K |
| 代理商： | IRH8150 |
2
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IRH7150
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
34
136
1.4
570
5.8
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = 34A, VGS = 0V
Tj = 25°C, IF = 34A, di/dt
≥
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
RthCS
Case-to-Sink
Min Typ Max
—
—
—
—
—
0.12
Units
Test Conditions
0.83
30
—
°C/W
Typical socket mount
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.13
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
8.0
—
—
—
—
—
—
—
—
0.065
0.076
4.0
—
25
250
VGS = 12V, ID = 21A
VGS = 12V, ID = 34A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 21A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 34A
VDS = 50V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
160
35
65
45
190
170
130
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 50V, ID = 34A
VGS =12V, RG = 2.35
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
4300
1200
200
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
ns
μ
A
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