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參數(shù)資料
| 型號： | IRH8150 |
| 英文描述： | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package |
| 中文描述： | 100V的1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 204AE包 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 273K |
| 代理商： | IRH8150 |
www.irf.com
5
Pre-Irradiation
IRH7150
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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