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參數(shù)資料
| 型號(hào)： | IRHE58Z30 |
| 英文描述： | 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package |
| 中文描述： | 30V的1000kRad高可靠性單個(gè)N -溝道工貿(mào)署在18硬化MOSFET的引腳LCC封裝 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 120K |
| 代理商： | IRHE58Z30 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
12
7.4
48
25
0.2
±20
85
12
2.5
3.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s )
0.42 ( Typical )
g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
07/15/02
www.irf.com
1
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
IRHE57034 100K Rads (Si) 0.08
IRHE53034 300K Rads (Si) 0.08
IRHE54034 600K Rads (Si) 0.08
IRHE58034 1000K Rads (Si) 0.1
I
D
12A
12A
12A
12A
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
IRHE57034
LCC-18
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
PD - 94239B
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