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參數資料
| 型號： | IRHF93230 |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道MOSFET的工貿硬化在TO - 205AF包 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF93230 |
www.irf.com
3
Radiation Characteristics
IRHF9230
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -200 — -200 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -25 — -25 μA V
DS
=-160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.8 — 0.8
V
GS
= -12V, I
D
=-2.4A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.8 — 0.8
V
GS
= -12V, I
D
=-2.4A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— -5.0 — -5.0 V V
GS
= 0V, IS = -4.0A
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
V
GS
= -20V
V
GS
= 20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHF9230 (JANSR2N7390)
2. Part number IRHF93230 (JANSF2N7390)
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
n
o
T
E
m
L
)
m
c
(
V
e
M
y
)
g
n
e
M
(
E
V
e
)
g
n
m
a
R
μ
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
0
2
5
8
2
0
4
0
0
2
0
0
2
0
0
2
0
0
2
—
r
B
8
3
5
0
3
0
3
0
0
2
0
0
2
5
2
1
5
7
—
-250
-200
-150
-100
-50
0
0
5
10
15
20
VGS
V
Cu
Br
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