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參數資料
| 型號： | IRHF93230 |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道MOSFET的工貿硬化在TO - 205AF包 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF93230 |
www.irf.com
5
Pre-Irradiation
IRHF9230
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-4.0A
V
=-40V
DS
V
=-100V
DS
V
=-160V
DS
0.1
1
10
100
0.5
1.0
-V ,Source-to-Drain Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
-
S
V = 0 V
T = 25 C
°
T = 150 C
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25 C
°
J
C
V , Drain-to-Source Voltage (V)
D
-
I
10us
100us
1ms
10ms
-
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