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參數(shù)資料
| 型號(hào)： | IRHG567110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補(bǔ)| 100V的五（巴西）直| 960MA（丁）|雙酯 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大小： | 184K |
| 代理商： | IRHG567110 |
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Absolute Maximum Ratings (Per Die)
Parameter
Continuous Drain Current
N-Channel
1.6
1.0
6.4
1.4
0.011
±20
130
1.6
0.14
6.5
P-Channel
-0.96
-0.6
-3.84
1.4
0.011
±20
200
~
-0.96
0.14
7.1
Units
ID @ VGS =± 12V, TC = 25°C
ID @ VGS =± 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
Pre-Irradiation
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
09/13/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHG567110 100K Rads (Si) 0.29
IRHG563110 300K Rads (Si) 0.29
IRHG567110 100K Rads (Si) 0.96
IRHG563110 300K Rads (Si) 0.96
I
D
CHANNEL
N
N
1.6A
1.6A
-0.96A P
-0.96A P
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
For footnotes refer to the last page
MO-036AB
IRHG567110
100V, Combination 2N-2P-CHANNEL
RAD-Hard
TECHNOLOGY
HEXFET
International Rectifier’s RAD-Hard
TM
HEXFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MOSFET
PD - 94246A
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| IRH250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-204AE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHG567110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG567110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 1.6A 14PIN MO-036AB - Rail/Tube |
| IRHG57110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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