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參數資料
| 型號： | IRHG567110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補| 100V的五（巴西）直| 960MA（丁）|雙酯 |
| 文件頁數： | 14/14頁 |
| 文件大小： | 184K |
| 代理商： | IRHG567110 |
IRHG567110
Pre-Irradiation
14
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
~
VDD = - 25V, starting TJ = 25
°
C, L= 430mH,
Peak IL = - 0.96A, VGS = -12V
ISD
≤
- 0.96A, di/dt
≤
- 290A/
μ
s,
VDD
≤
-100V, TJ
≤
150
°
C
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L= 100mH,
Peak IL = 1.6A, VGS = 12V
ISD
≤
1.6A, di/dt
≤
340A/
μ
s,
VDD
≤
100V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Case Outline and Dimensions
—
MO-036AB
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 09/01
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