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參數(shù)資料
| 型號： | IRHG567110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補| 100V的五（巴西）直| 960MA（丁）|雙酯 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 184K |
| 代理商： | IRHG567110 |
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11
Pre-Irradiation
IRHG567110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
P-Channel
Q2,Q4
1
10
100
0
100
200
300
400
500
600
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
2
4
6
8
10
12
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-0.96A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
1.0
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
-D
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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|---|---|
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