- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360958 > IRHG567110 TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHG567110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補(bǔ)| 100V的五（巴西）直| 960MA（丁）|雙酯 |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大小： | 184K |
| 代理商： | IRHG567110 |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
IRHG567110
Electrical Characteristics
For Each N-Channel Device
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min Typ
—
—
—
—
—
Max Units
1.6
6.4
1.2
110
380
Test Conditions
—
—
—
—
—
V
nS
nC
T
j
= 25°C, IS = 1.6A, VGS = 0V
Tj = 25°C, IF = 1.6A, di/dt
≤
100A/
μ
s
VDD
≤
25V
A
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
— —
0.14
—
Max Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V/°C
—
—
0.29
VGS = 12V, ID = 1.0A
2.0
1.0
—
—
— 4.0 V
— S (
)
—
10
—
25
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 1.0A
VDS= 80V, VGS= 0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.6A,
VDS = 50V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
17
4.4
3.9
21
16
30
15
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 50V, ID = 1.6A,
VGS =12V, RG = 7.5
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
370
110
3.4
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
ns
μ
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max
—
—
Units
Test Conditions
Typical socket mount
90
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHM150 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254AA |
| IRHM250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-254AA |
| IRHM450 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11.5A I(D) | TO-254AA |
| IRH250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-204AE |
| IRH254 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 19A I(D) | TO-204AE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHG567110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG567110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 1.6A 14PIN MO-036AB - Rail/Tube |
| IRHG57110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。