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參數資料
| 型號： | IRHG567110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補| 100V的五（巴西）直| 960MA（丁）|雙酯 |
| 文件頁數： | 5/14頁 |
| 文件大小： | 184K |
| 代理商： | IRHG567110 |
www.irf.com
5
Radiation Characteristics
IRHG567110
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25
°
C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100
—
-100
—
V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -4.0
I
GSS
Gate-to-Source Leakage Forward
—
-100
—
-100 nA
I
GSS
Gate-to-Source Leakage Reverse
—
100
—
100
I
DSS
Zero Gate Voltage Drain Current
—
-10
—
-10 μA
R
DS(on)
Static Drain-to-Source
—
0.916
—
0.936
V
GS
= -12V, I
D
=-0.6A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
—
0.96
—
0.98
V
GS
= -12V, I
D
=-0.6A
On-State Resistance (MO-036AB)
V
SD
Diode Forward Voltage
—
-3.5
—
-3.5 V V
GS
= 0V, IS = -0.96A
Units
Test Conditions
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=-80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHG567110
2. Part number IRHG563110
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area (Per Die)
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
V
Br
I
Au
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=17.5V
Br
37.3
285 36.8 -100 -100 -100 -100 -100
I
59.9
344 32.7 -100 -100 -100 -100 -75
Au
82.3
351 28.5 -100 -100 -100 -30
—
LET
Energy Range
V
DS
(V)
@V
=20V
-100
-25
—
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PDF描述 |
|---|---|
| IRHM150 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254AA |
| IRHM250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-254AA |
| IRHM450 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11.5A I(D) | TO-254AA |
| IRH250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-204AE |
| IRH254 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 19A I(D) | TO-204AE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHG567110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG567110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 1.6A 14PIN MO-036AB - Rail/Tube |
| IRHG57110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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