- 您現在的位置：買賣IC網 > PDF目錄360958 > IRHM58064 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package PDF資料下載
參數資料
| 型號： | IRHM58064 |
| 英文描述： | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 60V的1000kRad高可靠性單N溝道MOSFET的工貿硬化在TO - 254AA封裝 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 124K |
| 代理商： | IRHM58064 |
IRHM57064
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
2
www.irf.com
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Case-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
0.50
—
48
°C/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
35*
140
1.2
200
818
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by internal wire diameter
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
0.063 V/°C
Max Units
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
—
— 0.012
VGS = 12V, ID = 35A
2.0
42
—
—
—
—
—
—
4.0
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 50V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
160
55
65
35
125
75
50
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 30V, ID = 35A
VGS =12V, RG = 2.35
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
6300
2300
70
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
ns
μ
A
相關PDF資料 |
PDF描述 |
|---|---|
| IRHM58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-254AA |
| IRHM7054D | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7054U | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254AA |
| IRHM7250SE | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHM58064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58064SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58160 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHM58160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58160SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發布緊急采購，3分鐘左右您將得到回復。