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參數(shù)資料
| 型號： | IRHM58064 |
| 英文描述： | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 60V的1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 254AA封裝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 124K |
| 代理商： | IRHM58064 |
www.irf.com
5
Pre-Irradiation
IRHM57064
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
80
120
160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
35A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
相關PDF資料 |
PDF描述 |
|---|---|
| IRHM58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-254AA |
| IRHM7054D | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7054U | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254AA |
| IRHM7250SE | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM58064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58064SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58160 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHM58160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58160SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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