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參數(shù)資料
| 型號： | IRHM58064 |
| 英文描述： | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 60V的1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 254AA封裝 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | IRHM58064 |
IRHM57064
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L= 0.8 mH
Peak IL = 35A, VGS = 12V
ISD
≤
35A, di/dt
≤
265A/
μ
s,
VDD
≤
60V, TJ
≤
150
°
C
Footnotes:
Case Outline and Dimensions
—
TO-254AA
CAUTION
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO J EDEC OUTLINE TO-254AA.
1 = DRAIN
2 = SOURCE
3 = GATE
PIN ASSIGNMENTS
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
31.40 [1.235]
30.35 [1.195]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
1
2
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
22.73 [.895]
21.21 [.835]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
4.06 [.160]
3.56 [.140]
B
R 1.52 [.060]
1
2
3
4.82 [.190]
3.81 [.150]
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 09/01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHM58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-254AA |
| IRHM7054D | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7054U | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254AA |
| IRHM7250SE | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254AA |
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|---|---|
| IRHM58064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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| IRHM58160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58160SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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