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參數資料
| 型號： | IRHN57250SE |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package |
| 中文描述： | 200伏100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 1封裝 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 124K |
| 代理商： | IRHN57250SE |
www.irf.com
5
IRHN57250SE
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
1500
3000
4500
6000
7500
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
80
120
160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
31A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
V ,Source-to-Drain Voltage (V)
I
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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