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參數資料
| 型號： | IRHN57250SE |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package |
| 中文描述： | 200伏100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 1封裝 |
| 文件頁數： | 8/8頁 |
| 文件大小： | 124K |
| 代理商： | IRHN57250SE |
IRHN57250SE
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25
°
C, L= 0.62 mH
Peak IL = 31A, VGS = 12V
ISD
≤
31A, di/dt
≤
460A/
μ
s,
VDD
≤
200V, TJ
≤
150
°
C
Footnotes:
Case Outline and Dimensions
—
SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 08/01
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