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參數資料
型號: IRHN7250SE
英文描述: 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package
中文描述: 200伏100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 1封裝
文件頁數: 3/8頁
文件大小: 126K
代理商: IRHN7250SE
www.irf.com
3
Pre-Irradiation
IRHN7250SE
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Parameter
100K Rads (Si)
Min
200
2.0
Units
Test Conditions
Max
4.5
100
-100
25
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1) — 0.10
V
GS
= 12V, I
D
= 16A
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
=0V
nA
μA
0.10
V
GS
= 12V, I
D
= 16A
R
DS(on)
V
SD
1.9
V
V
GS
= 0V, I
D
= 26A
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Cu
28
285 43 200 200 200 200 200
Br
36.8
305 39 200 200 200 180 140
LET
Energy Range
V
DS
(V)
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
V
Cu
Br
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